Post Etch Defluorination Process

ABSTRACT

Defluorination processes for removing fluorine residuals from a workpiece such as a semiconductor wafer are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer. The workpiece can have one or more fluorine residuals on a surface of the workpiece. The method can include performing a defluorination process on the workpiece at least in part using a plasma generated from a first process gas. The first process gas can include a hydrogen gas. Subsequent to performing the defluorination process, the method can include performing a plasma strip process on the workpiece to at least partially remove a photoresist layer from the workpiece.

PRIORITY CLAIM

The present application claims the benefit of priority of U.S.Provisional Application Ser. No. 62/689,475, titled “Post EtchDefluorination Process,” filed on Jun. 25, 2018, which is incorporatedherein by reference for all purposes.

FIELD

The present disclosure relates generally to semiconductor processing andmore particularly, to post etch defluorination processes to beimplemented prior to plasma strip processes in semiconductor processing.

BACKGROUND

Plasma strip processes (e.g., dry strip processes) can be used insemiconductor fabrication as a method for removing photoresist and/orother materials patterned on a workpiece during semiconductorfabrication. Plasma strip processes can use reactive species (e.g.,radicals) extracted from a plasma generated from one or more processgases to etch and/or remove photoresist and other mask layers from asurface of a workpiece. For instance, in some plasma strip processes,neutral species from a plasma generated in a remote plasma chamber passthrough a separation grid into a processing chamber. The neutral speciescan be exposed to a workpiece, such as a semiconductor wafer, to removephotoresist from the surface of the workpiece.

SUMMARY

Aspects and advantages of embodiments of the present disclosure will beset forth in part in the following description, or may be learned fromthe description, or may be learned through practice of the embodiments.

One example aspect of the present disclosure is directed to a method forprocessing a workpiece, such as a semiconductor wafer. The method caninclude supporting a workpiece on a workpiece support. The workpiece canhave a photoresist layer. The workpiece can have one or more fluorineresiduals on a surface of the workpiece. The method can includeperforming a defluorination process on the workpiece at least in partusing a plasma generated from a first process gas. The first process gascan include a hydrogen gas. Subsequent to performing the defluorinationprocess, the method can include performing a plasma strip process on theworkpiece to at least partially remove a photoresist layer from theworkpiece.

These and other features, aspects and advantages of various embodimentswill become better understood with reference to the followingdescription and appended claims. The accompanying drawings, which areincorporated in and constitute a part of this specification, illustrateembodiments of the present disclosure and, together with thedescription, serve to explain the related principles.

BRIEF DESCRIPTION OF THE DRAWINGS

Detailed discussion of embodiments directed to one of ordinary skill inthe art are set forth in the specification, which makes reference to theappended figures, in which:

FIG. 1 depicts an overview of an example process according to exampleembodiments of the present disclosure;

FIG. 2 depicts an example plasma processing apparatus according toexample embodiments of the present disclosure;

FIG. 3 depicts a flow diagram of an example method according to exampleembodiments of the present disclosure;

FIG. 4 depicts example flow diagram of an example defluorination processaccording to example embodiments of the present disclosure;

FIG. 5 depicts example generation of hydrogen radicals using post-plasmagas injection according to example embodiments of the presentdisclosure;

FIG. 6 depicts example generation of hydrogen radicals using a filamentaccording to example embodiments of the present disclosure;

FIG. 7 depicts an example plasma processing apparatus according toexample embodiments of the present disclosure; and

FIG. 8 depicts an example plasma processing apparatus according toexample embodiments of the present disclosure.

DETAILED DESCRIPTION

Reference now will be made in detail to embodiments, one or moreexamples of which are illustrated in the drawings. Each example isprovided by way of explanation of the embodiments, not limitation of thepresent disclosure. In fact, it will be apparent to those skilled in theart that various modifications and variations can be made to theembodiments without departing from the scope or spirit of the presentdisclosure. For instance, features illustrated or described as part ofone embodiment can be used with another embodiment to yield a stillfurther embodiment. Thus, it is intended that aspects of the presentdisclosure cover such modifications and variations.

Example aspects of the present disclosure are directed to methods forprocessing a workpiece to reduce fluorine residuals (e.g., post etchfluorine residuals). Plasma strip processes (e.g., dry strip processes)can be used for the removal of photoresist and/or other mask materialsduring semiconductor fabrication processes. For instance, reactivespecies extracted from a plasma can be used to etch and/or remove aphotoresist on a surface of a workpiece, such as a semiconductor wafer.

In some cases, residual fluorine can be present on the workpiece (e.g.,after conducting an etch process with a fluorine chemistry). Oxygenbased plasmas used during plasma strip processes can react with thefluorine residuals to etch underlying layer materials on a workpiece.When metal layers are exposed on the workpiece during the plasma stripprocess, the residual fluorine can generate volatile metal componentsand can potentially contaminate the processing chamber. Metalcontamination can affect the stability of the chamber due to reactivespecies loss to increased recombination.

For example, a plasma strip process can be used to remove a layer ofphotoresist over exposed tungsten. During an oxygen-based plasma stripprocess, residual fluorine from prior etch processes (e.g., etchprocesses implemented with a fluorine chemistry) can react with theoxygen and tungsten to form volatile tungsten oxides and oxy-fluorides.The tungsten oxides and oxy-fluorides can be deposited on coolerportions of a plasma processing apparatus. Accumulation of the tungstencompounds can lead to increased recombination of oxygen radicals duringan oxygen-based plasma strip process, resulting in a reduced photoresiststrip rate during the plasma strip process. Fluorine can also bereleased from a workpiece surface during workpiece heating and can beadhered to portions of the plasma processing apparatus, affecting plasmastrip process performance.

Example aspects of the present disclosure are directed to conducting adefluorination process on a workpiece prior to implementing a plasmastrip process. The defluorination process can be performed in-situ inthe same processing chamber as the plasma strip process. Thedefluorination process can expose the workpiece to one or more hydrogenradicals. The hydrogen radicals can react with the fluorine residuals togenerate HF molecules (e.g., HF gas). The HF molecules can be evacuatedfrom a processing chamber. The plasma strip process can then beimplemented to remove the photoresist (e.g., using an oxygen-basedplasma). In this way, effects resulting from the presence of one or morefluorine residuals during a plasma strip process can be reduced.

In some embodiments, the hydrogen radicals can be generated in a plasmachamber that is separated from the processing chamber by a separationgrid. The hydrogen radicals can be generated, for instance, by inducinga plasma in a process gas. The process gas, for instance, can be amixture including H₂ and a carrier gas, such as a mixture including H₂and N₂, or can be a mixture including H₂ and He, or can be a mixtureincluding H₂ and Ar, or can be a mixture including H₂ and Ar and anotherinert gas. In some other embodiments, the hydrogen radicals can begenerated, for instance, using a heated filament, such as a heatedtungsten filament.

In some other embodiments, the hydrogen radicals can be generated usingpost-plasma gas injection. For instance, one or more excited inert gasmolecules (e.g., excited He molecules) can be generated in a plasmachamber that is separated from a processing chamber by a separationgrid. The excited inert gas molecules can be generated, for instance, byinducing a plasma in a process gas using a plasma source (e.g.,inductive plasma source, capacitive plasma source, etc.). The processgas can be an inert gas. For instance, the process gas can be helium,argon, xenon, neon, or other inert gas. In some embodiments, the processgas can consist of an inert gas. A separation grid can be used to filterions generated in the plasma chamber and allow passage of neutralspecies through holes in the separation grid to the processing chamberfor exposure to the workpiece.

In some embodiments, the hydrogen radicals can be generated by mixinghydrogen gas (H₂) with the excited species at or below (e.g.,downstream) the separation grid. For instance, in some embodiments, theseparation grid can have a plurality of grid plates. The hydrogen gascan be injected into species passing through the separation grid at alocation below or downstream of one of the grid plates. In someembodiments, the hydrogen gas can be injected into species passingthrough the separation grid at a location between two grid plates. Insome embodiments, the hydrogen gas can be injected into the species at alocation beneath all of the grid plates (e.g., in the processingchamber).

Mixing the hydrogen gas with the excited species from the inert gas canresult in the generation of one or more hydrogen radicals, such asneutral hydrogen radicals. The hydrogen radicals can be exposed to aworkpiece in the processing chamber to implement the defluorinationprocesses according to example embodiments of the present disclosure.

Example aspects of the present disclosure provide a number of technicaleffects and benefits. For instance, in-situ treatment of a workpiece(e.g., in the same processing chamber as the plasma strip process) withone or more hydrogen radicals can reduce the accumulation of tungstencompounds and subsequent drop in strip rate attributable to the presenceof fluorine residuals on the workpiece during the plasma strip process.

Aspects of the present disclosure are discussed with reference to a“workpiece” “wafer” or semiconductor wafer for purposes of illustrationand discussion. Those of ordinary skill in the art, using thedisclosures provided herein, will understand that the example aspects ofthe present disclosure can be used in association with any semiconductorsubstrate or other suitable substrate. In addition, the use of the term“about” in conjunction with a numerical value is intended to refer towithin ten percent (10%) of the stated numerical value. A “pedestal”refers to any structure that can be used to support a workpiece.

FIG. 1 depicts an overview of an example process 50 according to exampleembodiments of the present disclosure. At stage 52, a workpiece 70 caninclude a substrate layer 72 (e.g., silicon and/or silicon germanium). Alayer 74 to be etched (e.g., a dielectric layer, such as a silicondioxide layer, or metal layer, such as tungsten) can be disposed on topof substrate layer 72. A layer of photoresist 76 can be patterned on theworkpiece 70. The layer of photoresist 76 can be patterned to serve as amask for etching layer 74 during an etch process.

The process 50 implements an etch process 54 to remove a portion oflayer 74. The etch process 54 can, in some embodiments, be a fluorinebased etch process where fluorine, fluorine containing compounds,fluorine species, and/or fluorine mixtures are used to etch the exposedportion of layer 74. As illustrated at stage 56, fluorine residuals 75can remain on the workpiece 70 after completion of the etch process 54.

A photoresist removal process 58 can be implemented in a plasmaprocessing apparatus (e.g., the apparatus of FIG. 2, 7, or 8). Accordingto example embodiments of the present disclosure, the photoresistremoval process 58 can include a defluorination process and a plasmastrip process.

According to example embodiments of the present disclosure, thedefluorination process can include exposing the workpiece 70 to hydrogenradicals. The hydrogen radicals react with the fluorine residuals togenerate HF. The HF can be removed from the processing chamber of theplasma processing apparatus. At stage 60, the workpiece 70 has beentreated to remove the fluorine residuals 75.

As will be discussed in more detail below, in some embodiments, thedefluorination process can be implemented by generating a plasma from aprocess gas using a plasma source, such as an inductively coupled plasmasource. The process gas can include hydrogen. The plasma can generatehydrogen radicals. Neutral hydrogen radicals can pass through aseparation grid to a processing chamber where they are exposed to theworkpiece. The hydrogen radicals can react with the fluorine residualsto reduce the fluorine residuals on the workpiece. Other sources ofhydrogen radicals can be used, such as steam.

Example process parameters for a defluorination process according toexample embodiments of the present disclosure include:

Process Gas: H₂ and carrier gas (e.g., N₂ or Ar or He or combination)(or other sources of H radicals, such as steam)

H₂ ratio to carrier gas: about 2 to about 100

Treatment Time: about 5 seconds to about 60 seconds

Process Pressure: about 300 mTorr to about 4000 mTorr

Inductively Coupled Plasma Source Power: about 600 W to about 5000 W

Workpiece Temperature: about 90° C. to about 400° C.

Referring to FIG. 1, subsequent to the defluorination process, thephotoresist removal process 58 can include a plasma strip process. Theplasma strip process can expose the workpiece 70 to radicals (e.g.,generated from a process gas using a plasma source) to etch and/orremove the photoresist layer 76. Stage 62 depicts the workpiece 70 afterremoval of the photoresist layer 76.

Example process parameters for the plasma strip process can include:

Process Gas: O₂, or O₂ and carrier gas (e.g., N₂ or Ar or He orcombination)

Process Pressure: about 600 mTorr to about 1200 mTorr

Inductively Coupled Plasma Source Power: about 2000 W to about 5000 W

Workpiece Temperature: about 90° C. to about 400° C.

In some embodiments, the defluorination process can be performed in situwith the plasma strip process. For instance, the defluorination processand plasma strip process can be performed in the same processing chamberwithout having to remove the workpiece from the processing chamber.

FIG. 2 depicts an example plasma processing apparatus 100 that can beused to perform processes according to example embodiments of thepresent disclosure. As illustrated, plasma processing apparatus 100includes a processing chamber 110 and a plasma chamber 120 that isseparated from the processing chamber 110. Processing chamber 110includes a workpiece support or pedestal 112 operable to hold aworkpiece 114 to be processed, such as a semiconductor wafer. In thisexample illustration, a plasma is generated in plasma chamber 120 (i.e.,plasma generation region) by an inductively coupled plasma source 135and desired species are channeled from the plasma chamber 120 to thesurface of substrate 114 through a separation grid assembly 200.

Aspects of the present disclosure are discussed with reference to aninductively coupled plasma source for purposes of illustration anddiscussion. Those of ordinary skill in the art, using the disclosuresprovided herein, will understand that any plasma source (e.g.,inductively coupled plasma source, capacitively coupled plasma source,etc.) can be used without deviating from the scope of the presentdisclosure.

The plasma chamber 120 includes a dielectric side wall 122 and a ceiling124. The dielectric side wall 122, ceiling 124, and separation grid 200define a plasma chamber interior 125. Dielectric side wall 122 can beformed from a dielectric material, such as quartz and/or alumina. Theinductively coupled plasma source 135 can include an induction coil 130disposed adjacent the dielectric side wall 122 about the plasma chamber120. The induction coil 130 is coupled to an RF power generator 134through a suitable matching network 132. Process gases (e.g., a hydrogengas and a carrier gas) can be provided to the chamber interior from gassupply 150 and annular gas distribution channel 151 or other suitablegas introduction mechanism. When the induction coil 130 is energizedwith RF power from the RF power generator 134, a plasma can be generatedin the plasma chamber 120. In a particular embodiment, the plasmaprocessing apparatus 100 can include an optional grounded Faraday shield128 to reduce capacitive coupling of the induction coil 130 to theplasma.

As shown in FIG. 1, a separation grid 200 separates the plasma chamber120 from the processing chamber 110. The separation grid 200 can be usedto perform ion filtering from a mixture generated by plasma in theplasma chamber 120 to generate a filtered mixture. The filtered mixturecan be exposed to the workpiece 114 in the processing chamber.

In some embodiments, the separation grid 200 can be a multi-plateseparation grid. For instance, the separation grid 200 can include afirst grid plate 210 and a second grid plate 220 that are spaced apartin parallel relationship to one another. The first grid plate 210 andthe second grid plate 220 can be separated by a distance.

The first grid plate 210 can have a first grid pattern having aplurality of holes. The second grid plate 220 can have a second gridpattern having a plurality of holes. The first grid pattern can be thesame as or different from the second grid pattern. Charged particles canrecombine on the walls in their path through the holes of each gridplate 210, 220 in the separation grid. Neutral species (e.g., radicals)can flow relatively freely through the holes in the first grid plate 210and the second grid plate 220. The size of the holes and thickness ofeach grid plate 210 and 220 can affect transparency for both charged andneutral particles.

In some embodiments, the first grid plate 210 can be made of metal(e.g., aluminum) or other electrically conductive material and/or thesecond grid plate 220 can be made from either an electrically conductivematerial or dielectric material (e.g., quartz, ceramic, etc.). In someembodiments, the first grid plate 210 and/or the second grid plate 220can be made of other materials, such as silicon or silicon carbide. Inthe event a grid plate is made of metal or other electrically conductivematerial, the grid plate can be grounded. In some embodiments, the gridassembly can include a single grid with one grid plate.

FIG. 3 depicts a flow diagram of one example method (300) according toexample aspects of the present disclosure. The method (300) will bediscussed with reference to the plasma processing apparatus 100 of FIG.2 by way of example. The method (300) can be implemented in any suitableplasma processing apparatus. FIG. 3 depicts steps performed in aparticular order for purposes of illustration and discussion. Those ofordinary skill in the art, using the disclosures provided herein, willunderstand that various steps of any of the methods described herein canbe omitted, expanded, performed simultaneously, rearranged, and/ormodified in various ways without deviating from the scope of the presentdisclosure. In addition, various steps (not illustrated) can beperformed without deviating from the scope of the present disclosure.

At (302), the method can include conducting an etch process to etch alayer on a workpiece. The etch process can be carried out in a separateprocessing apparatus relative to the remainder of method (300). The etchprocess can remove at least a portion of a layer on the workpiece. Insome embodiments, the etch process can be a fluorine-based etch process.The workpiece can have one or more fluorine residuals afterimplementation of the fluorine-based etch process.

At (304), the method can include placing a workpiece in a processingchamber of a plasma processing apparatus. The processing chamber can beseparated from a plasma chamber (e.g., separated by a separation gridassembly). For instance, the method can include placing a workpiece 114onto workpiece support 112 in the processing chamber 110.

Referring to FIG. 3, the method can include performing a defluorinationprocess (306) according to example aspects of the present disclosure.The defluorination process can be any defluorination process disclosedherein. For instance, the defluorination process can be the exampledefluorination processes discussed with reference to FIGS. 4-6.

The defluorination process can expose a workpiece to one or morehydrogen radicals to react with fluorine residuals. For instance, thehydrogen radicals can react with the fluorine residuals to generate HF.

At (308), the method can include evacuating the HF from the processingchamber. For instance, HF gas generated as a result of thedefluorination process can be pumped out of the processing chamber 110.

At (310), the method can include performing a plasma strip process, forinstance, to remove photoresist from the workpiece. The plasma stripprocess can include, for instance, generating a plasma from a processgas in the plasma chamber 120, filtering ions with the separation gridassembly 200, and allowing neutral radicals to pass through theseparation grid assembly 200. The neutral radicals can be exposed to theworkpiece 114 to at least partially remove photoresist from theworkpiece.

The process gas used during the plasma strip process at (310) can bedifferent from the process gas used during the defluorination process at(308). For instance, the process gas during the defluorination processat (308) can include hydrogen gas. The process gas during the plasmastrip process at (310) can include an oxygen gas.

At (312) of FIG. 3, the method can include removing the workpiece fromthe processing chamber. For instance, the workpiece 114 can be removedfrom workpiece support 112 in the processing chamber 110. The plasmaprocessing apparatus can then be conditioned for future processing ofadditional workpieces. In this way, both the defluorination process(308) and the plasma strip process (310) can be performed using the sameprocessing apparatus while the workpiece is in the same processingchamber.

FIG. 4 depicts a flow diagram of an example defluorination process (400)according to example aspects of the present disclosure. The process(400) can be implemented using the plasma processing apparatus 100.However, as will be discussed in detail below, the methods according toexample aspects of the present disclosure can be implemented using otherapproaches without deviating from the scope of the present disclosure.FIG. 4 depicts steps performed in a particular order for purposes ofillustration and discussion. Those of ordinary skill in the art, usingthe disclosures provided herein, will understand that various steps ofany of the methods described herein can be omitted, expanded, performedsimultaneously, rearranged, and/or modified in various ways withoutdeviating from the scope of the present disclosure. In addition, variousadditional steps (not illustrated) can be performed without deviatingfrom the scope of the present disclosure.

At (402), the defluorination process can include heating the workpiece.For instance, the workpiece 114 can be heated in the process chamber toa process temperature. The workpiece 114 can be heated, for instance,using one or more heating systems associated with the pedestal 112. Insome embodiments, the workpiece can be heated to a process temperaturein the range of about 90° C. to about 400° C.

At (404), the defluorination process can include admitting a process gasinto the plasma chamber. For instance, a process gas can be admittedinto the plasma chamber interior 125 from a gas source 150 via annulargas distribution channel 151 or other suitable gas introductionmechanism. In some embodiments, the process gas can include a hydrogengas. For instance, the process gas can include H₂ and carrier gas (e.g.,Na or Ar or He or other inert gas or combination). A ratio of H₂ tocarrier gas can be about 2 to about 100.

At (406), the defluorination process can include energizing aninductively coupled plasma source to generate a plasma in a plasmachamber. For instance, induction coil 130 can be energized with RFenergy from RF power generator 134 to generate a plasma in the plasmachamber interior 125. In some embodiments, the inductively coupledplasma source can be energized with pulsed power to obtain desiredradicals with reduced plasma energy. In some embodiments, theinductively coupled plasma source can be operated with a power in therange of about 660 W to about 5000 W. The plasma can be used to generateone or more hydrogen radicals from the hydrogen gas at (408). Othersources of hydrogen radicals can be used, such as steam.

At (410), the defluorination process can include filtering one or moreions generated by the plasma to create a filtered mixture. The filteredmixture can include neutral hydrogen radicals. In some embodiments, theone or more ions can be filtered using a separation grid assemblyseparating the plasma chamber from a processing chamber where theworkpiece is located. For instance, separation grid assembly 200 can beused to filter ions generated by the plasma. The separation grid 200 canhave a plurality of holes. Charged particles (e.g., ions) can recombineon the walls in their path through the plurality of holes. Neutralspecies (e.g. radicals) can pass through the holes.

In some embodiments, the separation grid 200 can be configured to filterions with an efficiency greater than or equal to about 90%, such asgreater than or equal to about 95%. A percentage efficiency for ionfiltering refers to the amount of ions removed from the mixture relativeto the total number of ions in the mixture. For instance, an efficiencyof about 90% indicates that about 90% of the ions are removed duringfiltering. An efficiency of about 95% indicates that about 95% of theions are removed during filtering.

In some embodiments, the separation grid can be a multi-plate separationgrid. The multi-plate separation grid can have multiple separation gridplates in parallel. The arrangement and alignment of holes in the gridplate can be selected to provide a desired efficiency for ion filtering,such as greater than or equal to about 95%.

For instance, the separation grid 200 can have a first grid plate 210and a second grid plate 220 in parallel relationship with one another.The first grid plate 210 can have a first grid pattern having aplurality of holes. The second grid plate 220 can have a second gridpattern having a plurality of holes. The first grid pattern can be thesame as or different from the second grid pattern. Charged particles(e.g., ions) can recombine on the walls in their path through the holesof each grid plate 210, 220 in the separation grid 200. Neutral species(e.g., radicals) can flow relatively freely through the holes in thefirst grid plate 210 and the second grid plate 220.

At (412) of FIG. 4, the defluorination process can include exposing theworkpiece to the hydrogen radicals. More particularly, the workpiece canbe exposed to hydrogen radicals generated in the plasma and passingthrough the separation grid assembly. As an example, hydrogen radicalscan pass through the separation grid 200 and be exposed to the workpiece114. Exposing the workpiece to hydrogen radicals can result in removalof one or more fluorine residuals from the workpiece.

The defluorination process can be implemented by generating hydrogenradicals using other approaches without deviating from the scope of thepresent disclosure. For instance, in some embodiments, the hydrogenradicals can be generated at least in part using post-plasma gasinjection and/or a heated filament and/or steam.

FIG. 5 depicts example generation of hydrogen radicals using post-plasmagas injection according to example embodiments of the presentdisclosure. More particularly, FIG. 5 depicts an example separation grid200 for injection of hydrogen post-plasma according to exampleembodiments of the present disclosure. More particularly, the separationgrid 200 includes a first grid plate 210 and a second grid plate 220disposed in parallel relationship. The first grid plate 210 and thesecond grid plate 220 can provide for ion/UV filtering.

The first grid plate 210 and a second grid plate 220 can be in parallelrelationship with one another. The first grid plate 210 can have a firstgrid pattern having a plurality of holes. The second grid plate 220 canhave a second grid pattern having a plurality of holes. The first gridpattern can be the same as or different from the second grid pattern.Species (e.g., excited inert gas molecules) 215 from the plasma can beexposed to the separation grid 200. Charged particles (e.g., ions) canrecombine on the walls in their path through the holes of each gridplate 210, 220 in the separation grid 200. Neutral species can flowrelatively freely through the holes in the first grid plate 210 and thesecond grid plate 220.

Subsequent to the second grid plate 220, a gas injection source 230 canbe configured to mix hydrogen 232 into the species passing through theseparation grid 200. A mixture 225 including hydrogen radicals resultingfrom the injection of hydrogen gas can pass through a third grid plate235 for exposure to the workpiece in the processing chamber.

The present example is discussed with reference to a separation gridwith three grid plates for example purposes. Those of ordinary skill inthe art, using the disclosures provided herein, will understand thatmore or fewer grid plates can be used without deviating from the scopeof the present disclosure. In addition, the hydrogen can be mixed withthe species at any point in the separation grid and/or after theseparation grid in the processing chamber. For instance, the gasinjection source 230 can be located between first grid plate 210 andsecond grid plate 220.

In some embodiments, the hydrogen radicals can be generated by passing ahydrogen gas over a heated filament (e.g., a tungsten filament). Forexample, as shown in FIG. 6, a hydrogen gas H₂ 240 can be passed over aheated filament 245 (e.g., a tungsten filament) to generate hydrogenradicals 225 in a first chamber. The hydrogen radicals 225 can be passedthrough a separation grid 200.

The separation grid 200 includes a first grid plate 210 and a secondgrid plate 220 disposed in parallel relationship. The first grid plate210 can have a first grid pattern having a plurality of holes. Thesecond grid plate 220 can have a second grid pattern having a pluralityof holes. The first grid pattern can be the same as or different fromthe second grid pattern.

The defluorination process and/or plasma strip process can beimplemented using other plasma processing apparatus without deviatingfrom the scope of the present disclosure.

FIG. 7 depicts an example plasma processing apparatus 500 that can beused to implement processes according to example embodiments of thepresent disclosure. The plasma processing apparatus 500 is similar tothe plasma processing apparatus 100 of FIG. 2.

More particularly, plasma processing apparatus 500 includes a processingchamber 110 and a plasma chamber 120 that is separated from theprocessing chamber 110. Processing chamber 110 includes a substrateholder or pedestal 112 operable to hold a workpiece 114 to be processed,such as a semiconductor wafer. In this example illustration, a plasma isgenerated in plasma chamber 120 (i.e., plasma generation region) by aninductively coupled plasma source 135 and desired species are channeledfrom the plasma chamber 120 to the surface of substrate 114 through aseparation grid assembly 200.

The plasma chamber 120 includes a dielectric side wall 122 and a ceiling124. The dielectric side wall 122, ceiling 124, and separation grid 200define a plasma chamber interior 125. Dielectric side wall 122 can beformed from a dielectric material, such as quartz and/or alumina. Theinductively coupled plasma source 135 can include an induction coil 130disposed adjacent the dielectric side wall 122 about the plasma chamber120. The induction coil 130 is coupled to an RF power generator 134through a suitable matching network 132. Process gases (e.g., an inertgas) can be provided to the chamber interior from gas supply 150 andannular gas distribution channel 151 or other suitable gas introductionmechanism. When the induction coil 130 is energized with RF power fromthe RF power generator 134, a plasma can be generated in the plasmachamber 120. In a particular embodiment, the plasma processing apparatus100 can include an optional grounded Faraday shield 128 to reducecapacitive coupling of the induction coil 130 to the plasma.

As shown in FIG. 7, a separation grid 200 separates the plasma chamber120 from the processing chamber 110. The separation grid 200 can be usedto perform ion filtering from a mixture generated by plasma in theplasma chamber 120 to generate a filtered mixture. The filtered mixturecan be exposed to the workpiece 114 in the processing chamber.

In some embodiments, the separation grid 200 can be a multi-plateseparation grid. For instance, the separation grid 200 can include afirst grid plate 210 and a second grid plate 220 that are spaced apartin parallel relationship to one another. The first grid plate 210 andthe second grid plate 220 can be separated by a distance.

The first grid plate 210 can have a first grid pattern having aplurality of holes. The second grid plate 220 can have a second gridpattern having a plurality of holes. The first grid pattern can be thesame as or different from the second grid pattern. Charged particles canrecombine on the walls in their path through the holes of each gridplate 210, 220 in the separation grid. Neutral species (e.g., radicals)can flow relatively freely through the holes in the first grid plate 210and the second grid plate 220. The size of the holes and thickness ofeach grid plate 210 and 220 can affect transparency for both charged andneutral particles.

In some embodiments, the first grid plate 210 can be made of metal(e.g., aluminum) or other electrically conductive material and/or thesecond grid plate 220 can be made from either an electrically conductivematerial or dielectric material (e.g., quartz, ceramic, etc.). In someembodiments, the first grid plate 210 and/or the second grid plate 220can be made of other materials, such as silicon or silicon carbide. Inthe event a grid plate is made of metal or other electrically conductivematerial, the grid plate can be grounded.

As discussed above, a hydrogen gas can be injected into species passingthrough the separation grid 200 to generate one or more hydrogenradicals for exposure to the workpiece 114. The hydrogen radicals can beused to implement a variety of semiconductor fabrication processes.

The example plasma processing apparatus 500 of FIG. 7 is operable togenerate a first plasma 502 (e.g., a remote plasma) in the plasmachamber 120 and a second plasma 504 (e.g., a direct plasma) in theprocessing chamber 110. As used herein, a “remote plasma” refers to aplasma generated remotely from a workpiece, such as in a plasma chamberseparated from a workpiece by a separation grid. As used herein, a“direct plasma” refers to a plasma that is directly exposed to aworkpiece, such as a plasma generated in a processing chamber having apedestal operable to support the workpiece.

More particularly, the plasma processing apparatus 500 of FIG. 7includes a bias source having bias electrode 510 in the pedestal 112.The bias electrode 510 can be coupled to an RF power generator 514 via asuitable matching network 512. When the bias electrode 510 is energizedwith RF energy, a second plasma 504 can be generated from a mixture inthe processing chamber 110 for direct exposure to the workpiece 114. Theprocessing chamber 110 can include a gas exhaust port 516 for evacuatinga gas from the processing chamber 110. The hydrogen radicals used in thedefluorination processes according to example aspects of the presentdisclosure can be generated using the first plasma 502 and/or the secondplasma 504.

FIG. 8 depicts a processing chamber 600 similar to that of FIG. 2 andFIG. 7. More particularly, plasma processing apparatus 600 includes aprocessing chamber 110 and a plasma chamber 120 that is separated fromthe processing chamber 110. Processing chamber 110 includes a substrateholder or pedestal 112 operable to hold a workpiece 114 to be processed,such as a semiconductor wafer. In this example illustration, a plasma isgenerated in plasma chamber 120 (i.e., plasma generation region) by aninductively coupled plasma source 135 and desired species are channeledfrom the plasma chamber 120 to the surface of substrate 114 through aseparation grid assembly 200.

The plasma chamber 120 includes a dielectric side wall 122 and a ceiling124. The dielectric side wall 122, ceiling 124, and separation grid 200define a plasma chamber interior 125. Dielectric side wall 122 can beformed from a dielectric material, such as quartz and/or alumina. Theinductively coupled plasma source 135 can include an induction coil 130disposed adjacent the dielectric side wall 122 about the plasma chamber120. The induction coil 130 is coupled to an RF power generator 134through a suitable matching network 132. Process gas (e.g., an inertgas) can be provided to the chamber interior from gas supply 150 andannular gas distribution channel 151 or other suitable gas introductionmechanism. When the induction coil 130 is energized with RF power fromthe RF power generator 134, a plasma can be generated in the plasmachamber 120. In a particular embodiment, the plasma processing apparatus100 can include an optional grounded Faraday shield 128 to reducecapacitive coupling of the induction coil 130 to the plasma.

As shown in FIG. 8, a separation grid 200 separates the plasma chamber120 from the processing chamber 110. The separation grid 200 can be usedto perform ion filtering from a mixture generated by plasma in theplasma chamber 120 to generate a filtered mixture. The filtered mixturecan be exposed to the workpiece 114 in the processing chamber.

In some embodiments, the separation grid 200 can be a multi-plateseparation grid. For instance, the separation grid 200 can include afirst grid plate 210 and a second grid plate 220 that are spaced apartin parallel relationship to one another. The first grid plate 210 andthe second grid plate 220 can be separated by a distance.

The first grid plate 210 can have a first grid pattern having aplurality of holes. The second grid plate 220 can have a second gridpattern having a plurality of holes. The first grid pattern can be thesame as or different from the second grid pattern. Charged particles canrecombine on the walls in their path through the holes of each gridplate 210, 220 in the separation grid. Neutral species (e.g., radicals)can flow relatively freely through the holes in the first grid plate 210and the second grid plate 220. The size of the holes and thickness ofeach grid plate 210 and 220 can affect transparency for both charged andneutral particles.

In some embodiments, the first grid plate 210 can be made of metal(e.g., aluminum) or other electrically conductive material and/or thesecond grid plate 220 can be made from either an electrically conductivematerial or dielectric material (e.g., quartz, ceramic, etc.). In someembodiments, the first grid plate 210 and/or the second grid plate 220can be made of other materials, such as silicon or silicon carbide. Inthe event a grid plate is made of metal or other electrically conductivematerial, the grid plate can be grounded.

The example plasma processing apparatus 600 of FIG. 8 is operable togenerate a first plasma 602 (e.g., a remote plasma) in the plasmachamber 120 and a second plasma 604 (e.g., a direct plasma) in theprocessing chamber 110. As shown, the plasma processing apparatus 600can include an angled dielectric sidewall 622 that extends from thevertical sidewall 122 associated with the remote plasma chamber 120. Theangled dielectric sidewall 622 can form a part of the processing chamber110.

A second inductive plasma source 635 can be located proximate thedielectric sidewall 622. The second inductive plasma source 635 caninclude an induction coil 610 coupled to an RF generator 614 via asuitable matching network 612. The induction coil 610, when energizedwith RF energy, can induce a direct plasma 604 from a mixture in theprocessing chamber 110. A Faraday shield 628 can be disposed between theinduction coil 610 and the sidewall 622.

The pedestal 112 can be movable in a vertical direction V. For instance,the pedestal 112 can include a vertical lift 616 that can be configuredto adjust a distance between the pedestal 112 and the separation gridassembly 200. As one example, the pedestal 112 can be located in a firstvertical position for processing using the remote plasma 602. Thepedestal 112 can be in a second vertical position for processing usingthe direct plasma 604. The first vertical position can be closer to theseparation grid assembly 200 relative to the second vertical position.

The plasma processing apparatus 600 of FIG. 8 includes a bias sourcehaving bias electrode 510 in the pedestal 112. The bias electrode 510can be coupled to an RF power generator 514 via a suitable matchingnetwork 512. The processing chamber 110 can include a gas exhaust port516 for evacuating a gas from the processing chamber 110. The hydrogenradicals used in the defluorination processes according to exampleaspects of the present disclosure can be generated using the firstplasma 602 and/or the second plasma 604.

While the present subject matter has been described in detail withrespect to specific example embodiments thereof, it will be appreciatedthat those skilled in the art, upon attaining an understanding of theforegoing may readily produce alterations to, variations of, andequivalents to such embodiments. Accordingly, the scope of the presentdisclosure is by way of example rather than by way of limitation, andthe subject disclosure does not preclude inclusion of suchmodifications, variations and/or additions to the present subject matteras would be readily apparent to one of ordinary skill in the art.

1-20. (canceled)
 21. A method for processing a workpiece, the methodcomprising: supporting a workpiece on a workpiece support, the workpiecehaving a photoresist layer, the workpiece having one or more fluorineresiduals on a surface of the workpiece; performing a defluorinationprocess on the workpiece at least in part using a plasma generated froma first process gas, the first process gas comprising a hydrogen gas;subsequent to performing the defluorination process, performing a plasmastrip process on the workpiece to at least partially remove thephotoresist layer from the workpiece, wherein the defluorination processcomprises exposing the workpiece to one or more hydrogen radicals. 22.The method of claim 21, wherein performing the defluorination processcomprises: generating the one or more hydrogen radicals in a plasmachamber from the first process gas using a plasma source; filtering ionsgenerated using the plasma with a separation grid separating the plasmachamber from a processing chamber; exposing the workpiece to thehydrogen radicals in the processing chamber.
 23. The method of claim 21,wherein the first process gas further comprises a carrier gas, whereinthe carrier gas comprises nitrogen or an inert gas.
 24. The method ofclaim 21, wherein the plasma strip process comprises: generating one ormore species in a plasma chamber from a second process gas using aplasma source; filtering ions using a separation grid separating theplasma chamber from a processing chamber to allow the passage of one ormore neutral radicals; exposing the workpiece to one or more neutralradicals in the processing chamber; wherein the second process gascomprises oxygen.
 25. The method of claim 21, wherein the defluorinationprocess is implemented for a treatment time, the treatment time being inthe range of about 5 seconds to about 60 seconds.
 26. The method ofclaim 21, wherein the defluorination process is conducted at a processpressure in the processing chamber, the process pressure being in therange of about 300 mT to about 4000 mT.
 27. The method of claim 21,wherein the defluorination process is conducted at a source power, thesource power being in the range of about 600 W to about 5000 W.
 28. Themethod of claim 21, wherein the defluorination process is conducted withthe workpiece at a process temperature, the process temperature being inthe range of about 90° C. to about 400° C.
 29. The method of claim 21,wherein a ratio of hydrogen gas to one or more carrier gases in thefirst process gas is about 2 to about
 100. 30. The method of claim 24,wherein the second process gas comprises oxygen and nitrogen.
 31. Themethod of claim 21, wherein the workpiece comprises a metal layer. 32.The method of claim 31, wherein the metal layer comprises tungsten. 33.The method of claim 21, wherein the fluorine residuals result from anetch process.
 34. The method of claim 22, wherein the hydrogen radicalsreact with the one or more fluorine residuals to generate an HF gas. 35.The method of claim 34, further comprising pumping the HF gas from theprocessing chamber prior to performing the plasma strip process.
 36. Amethod for implementing a defluorination process on a workpiece, theworkpiece comprising a photoresist layer, the workpiece having one ormore fluorine residuals on the workpiece, the method comprising:supporting the workpiece on a workpiece support in a processing chamber;generating one or more hydrogen radicals; exposing the one or morehydrogen radicals to the workpiece to react the hydrogen radicals withthe one or more fluorine residuals and generate an HF gas; evacuatingthe HF gas from the processing chamber; wherein the one or more hydrogenradicals are generated by mixing a hydrogen gas with one or more excitedinert gas molecules downstream of a plasma source.
 37. The method ofclaim 36, wherein the processing chamber is separated from the plasmasource by a separation grid, the hydrogen gas being mixed with one ormore excided inert gas molecules at or below the separation grid.